Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.55 μm
نویسندگان
چکیده
The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows it to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.
منابع مشابه
Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.5 μm
The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows ...
متن کاملEffects of Bragg Mirror Interface Grading and Layer Thickness Variations on VCSEL Performance at 1.55μm
A selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and fabricated for operation at a wavelength of 1.546μm. The lattice matched device structure was grown on an InP substrate using III-V quaternary semiconductor alloys for Bragg mirrors and GaInAsP-based unstrained Multi-Quantum Wells (MQW) for the active layer. The mirror reflectivities are 97% for the top ...
متن کاملWafer bonded 1.55 mm vertical-cavity lasers with continuous-wave operation up to 105°C
Vertical cavity surface emitting lasers ~VCSELs! emitting in the 1.55 mm wavelength region are attractive sources for optical networks. Advantages of VCSELs include low power consumption, efficient fiber coupling, and high volume, low cost manufacturing. Transmission at 1.55 mm allows for long distance transmission over optical fiber with low attenuation and dispersion. The main limitation to r...
متن کاملGrowth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures
We have investigated the regrowth of GaAs/AlAs quarter-wave Bragg reflectors on patterned mesa InP-based quantum well heterostructures that can be fabricated into 1.55 mm vertical cavity surface emitting lasers. It is seen from transmission electron and scanning electron microscopy that the multiple layer GaAs-based mirrors can be grown on InP-based heterostructure mesas of diameters 10–40 mm w...
متن کاملPhotonic integrated circuits based on quantum well intermixing techniques
The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the b...
متن کامل